Millimeter-Wave and Terahertz Transceivers in SiGe BiCMOS Technologies

Millimeter-Wave Circuit Design for Radar Transceivers

Si and SiGe Millimeter-Wave Integrated Circuits

Monolithic integrated millimeter-wave circuits based on silicon and SiGe are emerging as an attractive option in the field of millimeter-wave communications and millimeterwave sensorics. The combination of active devices with passive planar structures, including also antenna elements, allows single-chip realizations of complete millimeter-wave front-ends. This paper reviews the state-of-the-art...

Foundation of rf CMOS and SiGe BiCMOS technologies

This paper provides a detailed description of the IBM SiGe BiCMOS and rf CMOS technologies. The technologies provide high-performance SiGe heterojunction bipolar transistors (HBTs) combined with advanced CMOS technology and a variety of passive devices critical for realizing an integrated mixed-signal system-on-a-chip (SoC). The paper reviews the process development and integration methodology,...

Terahertz Imaging, Millimeter-wave Radar

The millimeter wave (MMW) band of frequencies extends from 30 GHz to 300 GHz, with some fuzziness on both ends of this spectrum. The terahertz (THz) band extends from about 200 GHz to about 30 THz, despite the fact that the lower frequencies in this range are not strictly 10 Hz or higher. These bands are also variously called submillimeter, far-infrared, and near-millimeter. In recent years, th...

Millimeter-Wave/Sub-Terahertz CMOS Transceivers for High-Speed Wireless Communications

Millimeter-Wave/Sub-Terahertz CMOS Transceivers for High-Speed Wireless Communications by Shinwon Kang Doctor of Philosophy in Electrical Engineering and Computer Sciences University of California, Berkeley Professor Ali M. Niknejad, Chair Millimeter-wave and sub-terahertz frequency bands are available for wideband applications such as high data-rate communication systems. As the respective wav...